Colloquium
Department of Physics, NCU
The 2nd Renaissance of Spintronics – From spin-transfer torque to spin-orbit torque MRAM
Prof. Chi-Feng Pai (白奇峰)
Department of Material Science and Engineering, National Taiwan University
Date 2019.12.24 (Tue)
Place S4-625
Time 14:00-16:00
The second generation magnetoresistive random access memory (MRAM), which employs the physics of spin-transfer torque (STT) and the nature of spin angular momentum of itinerant electrons, is now in mass production by major foundries such as TSMC and Samsung. In this talk, I will go through the discovery of spin transfer torque and how it led to the second renaissance of spintronics as well as the invention of STT-MRAM. The physics and the engineering perspectives of future spintronic devices will also be discussed.